Wordline driving circuit of semiconductor memory device

Details Wordline driving circuit of semiconductor memory device Wordline driving circuit of semiconductor memory device

2011-07-19

2011-07-19

Hoang, Huan (Department: 2827)

Static information storage and retrieval

Read/write circuit

Including reference or bias voltage generator

C365S230060, C365S230080

Reexamination Certificate

active

07983097

ABSTRACT:
Wordline driving circuit of semiconductor memory device includes a bias generator configured to generate a threshold bias voltage for accessing data, an over-driver configured to increase the threshold bias voltage at an initial stage of a data accessing operation and a wordline driver configured to activate a wordline in response to the threshold bias voltage and a signal output from the over-driver.

REFERENCES:
patent: 2006/0104146 (2006-05-01), Lee
patent: 10-2003-0002731 (2003-01-01), None
patent: 10-2006-0054573 (2006-05-01), None

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