Wordline-based source-biasing scheme for reducing memory...

Details Wordline-based source-biasing scheme for reducing memory... Wordline-based source-biasing scheme for reducing memory...

2006-06-13

2006-06-13

Nguyen, Tuan T. (Department: 2824)

Static information storage and retrieval

Systems using particular element

Flip-flop

C365S189090, C365S230020

Reexamination Certificate

active

07061794

ABSTRACT:
A source-biasing mechanism for leakage reduction in SRAM. In standby mode, wordlines are deselected and a source-biasing potential is provided to SRAM cells. In read mode, a selected wordline deactivates the source-biasing potential provided to the selected row of SRAM cells, whereas the remaining SRAM cells on the selected bitline column continue to be source-biased.

REFERENCES:
patent: 6172901 (2001-01-01), Portacci
patent: 6181608 (2001-01-01), Keshavarzi et al.
patent: 6515893 (2003-02-01), Bhavnagarwala
patent: 6920060 (2005-07-01), Chow et al.
patent: 2003/0012048 (2003-01-01), Chappell et al.
patent: 2003/0081492 (2003-05-01), Farrell et al.
patent: 2005/0128789 (2005-06-01), Houston
Kenichi Osada et al.; “16.7fA/cell Tunnel-Leakage-Suppressed 16MB SRAM for Handling Cosmic-Ray-Induced Multi-Errors”; 2003 IEEE International Solid-State Circuits Conference; pp. 302-303.

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