Word line transistor strength control for read and write in...

Details Word line transistor strength control for read and write in... Word line transistor strength control for read and write in...

2007-06-29

2010-06-22

Nguyen, Tuan T (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S173000, C365S209000

Reexamination Certificate

active

07742329

ABSTRACT:
Systems, circuits and methods for controlling word line voltage at a word line transistor in Spin Transfer Torque Magnetoresistive Random Access Memory (STT-MRAM) are disclosed. A first voltage can be supplied to the word line transistor for write operations. A second voltage, which is less than the first voltage, can be supplied to the word line transistor during read operations.

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