Wiring using chromium nitride and methods of fabrication therefo

Details Wiring using chromium nitride and methods of fabrication therefo Wiring using chromium nitride and methods of fabrication therefo

1997-10-09

1999-10-19

Powell, William

Semiconductor device manufacturing: process

Chemical etching

Liquid phase etching

216 23, 216102, 347147, 438609, 438673, 438713, 438719, H01L 2100, B44C 122

Patent

active

059688505

ABSTRACT:
A wiring according to the present invention is made of a chromium layer and a chromium nitride layer. To make the wiring, a layer of chromium is deposited on a substrate, and then a layer of chromium nitride is deposited. A layer of photoresist is covered on the layer of chromium nitride and patterned, the layers of chromium and chromium nitride are wet etched in sequence using the photoresist pattern as a mask. Since the layer of chromium nitride is etched more quickly than the layer of chromium, the layer of photoresist and the layer of chromium are separated from each other and the chromium layer is isotropically etched to form a pattern having an edge with a gentle slope.

REFERENCES:
patent: 4970368 (1990-11-01), Yamazaki et al.
patent: 5234541 (1993-08-01), Shannon
patent: 5792705 (1998-08-01), Wang et al.

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