Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent
1997-12-18
2000-01-04
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
257774, 257776, H01L 2348, H01L 2352, H01L 2940
Patent
active
06011309&
ABSTRACT:
The present invention relates to a method for connecting the two conductive lines located on separate layers with an intervening insulation layer between them, and a wiring structure formed by the same method. The method includes the steps of forming a first conductive layer on the substrate, forming an insulation layer on the first conductive layer, forming a second conductive layer having a first portion overlapping the first conductive layer, removing a portion of the first portion of the second conductive layer that overlaps the first conductive layer to form a top contact hole exposing a portion of the insulation layer, removing the exposed portion of the insulation layer through the top contact hole to form an enlarged contact hole, and forming a conductive pad in contact with the first conductive layer and the second conductive layer through the enlarged contact hole.
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LG Electronics Inc.
Ngo Ngan V.
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