Wiring structure of semiconductor device and method for manufact

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum

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257915, 438685, 438677, 438648, H01L 23532, H01L 2144

Patent

active

059988703

ABSTRACT:
A wiring structure of a semiconductor device buries an aperture, for example, a contact hole or via hole. The wiring structure includes a semiconductor substrate, an insulating layer formed on the semiconductor substrate and having an aperture formed therein, a diffusion barrier film formed on the inner sidewalls of the aperture and which has a smooth surface without having grain boundaries made of a refractory metal or refractory metal compound, and a metal layer formed on the diffusion barrier film. The metal layer formed on the smooth sidewalls of the diffusion barrier film is made of a uniformly and continuously formed aluminum film having an excellent step coverage. Accordingly, the method for forming the wiring structure effectively buries a contact hole having a high aspect ratio and enhances the reliability of a manufactured device.

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patent: 5508066 (1996-04-01), Akahori
patent: 5685960 (1997-11-01), Fu et al.

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