Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent
1997-06-12
1999-12-07
Everhart, Caridad
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
257915, 438685, 438677, 438648, H01L 23532, H01L 2144
Patent
active
059988703
ABSTRACT:
A wiring structure of a semiconductor device buries an aperture, for example, a contact hole or via hole. The wiring structure includes a semiconductor substrate, an insulating layer formed on the semiconductor substrate and having an aperture formed therein, a diffusion barrier film formed on the inner sidewalls of the aperture and which has a smooth surface without having grain boundaries made of a refractory metal or refractory metal compound, and a metal layer formed on the diffusion barrier film. The metal layer formed on the smooth sidewalls of the diffusion barrier film is made of a uniformly and continuously formed aluminum film having an excellent step coverage. Accordingly, the method for forming the wiring structure effectively buries a contact hole having a high aspect ratio and enhances the reliability of a manufactured device.
REFERENCES:
patent: 4994410 (1991-02-01), Sun et al.
patent: 5151305 (1992-09-01), Matsumoto et al.
patent: 5171412 (1992-12-01), Talieh et al.
patent: 5232871 (1993-08-01), Ho
patent: 5290731 (1994-03-01), Sugano et al.
patent: 5296404 (1994-03-01), Akahori et al.
patent: 5508066 (1996-04-01), Akahori
patent: 5685960 (1997-11-01), Fu et al.
Ha Sun-ho
Lee Sang-in
Everhart Caridad
Samsung Electronics Co,. Ltd.
LandOfFree
Wiring structure of semiconductor device and method for manufact does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Wiring structure of semiconductor device and method for manufact, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Wiring structure of semiconductor device and method for manufact will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-827201