Wiring structure of a semiconductor device and method of...

Details Wiring structure of a semiconductor device and method of... Wiring structure of a semiconductor device and method of...

2006-07-19

2009-08-11

Smith, Zandra (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S750000, C257S751000, C257S755000, C438S657000

Reexamination Certificate

active

07573132

ABSTRACT:
A wiring structure of a semiconductor device may have an insulation layer, a spacer and a plug. The insulation layer may be provided on a substrate and may have an opening through which a contact region of the substrate is exposed. The spacer may be provided on a sidewall of the opening. The plug may fill the opening and may include a polysilicon pattern doped with impurities, a metal silicide pattern, and a metal pattern sequentially provided on the substrate.

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patent: 6545360 (2003-04-01), Ohkubo et al.
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patent: 2002-203810 (2002-07-01), None
patent: 10-2002-0002086 (2002-01-01), None
patent: 10-321738 (2002-01-01), None

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