Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1997-05-27
2000-05-02
Nelms, David
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438659, 438672, 438675, 438687, H01L 2144
Patent
active
060572329
ABSTRACT:
A metal wiring for semiconductor devices having a double-layer passivation film structure consisting of an intermetallic compound layer formed on a copper thin film and made of a metal reacting with copper to form an intermetallic compound and a metal nitride layer formed over the intermetallic compound. This double-layer passivation film structure is obtained by depositing a metal layer, capable of reacting with copper to form an intermetallic compound, over the copper wiring, and annealing the metal layer in a nitrogen atmosphere, thereby forming an intermetallic compound layer over the copper wiring. By virtue of the double-layer passivation film structure, the copper wiring has a great improvement in the reliability. A metal silicide layer is formed between a diffusion region and a diffusion barrier layer in the contact hole of the semiconductor device. The diffusion barrier layer, which is formed on an insulating layer doped with nitrogen ions, is changed into a metal nitride film. Accordingly, a reduced ohmic contact resistance and an improved passivation reliability are achieved.
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Berry Renee R.
LG Semicon Co. Ltd.
Nelms David
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