Wiring structure and semiconductor device, and their...

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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Details

C438S622000, C438S637000, C438S652000, C438S675000, C257S773000, C257SE23142, C257SE21575

Reexamination Certificate

active

08080470

ABSTRACT:
A fabrication method for a wiring structure of the present invention includes: a process of forming a conductive wiring layer; a process of forming a wiring pattern on the wiring layer; a process of forming an insulative wiring interlayer film between wires of the wiring pattern; and a process of forming a plurality of longitudinal hole-shaped fine pores in the wiring interlayer film in a thickness direction of the wiring interlayer film by etching with a mask including one of nano-particles and material including nano-particles.

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patent: 2004-319523 (2004-11-01), None

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