Wiring patterns formed by selective metal plating

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Wire contact – lead – or bond

Reexamination Certificate

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C257SE21614

Reexamination Certificate

active

07345370

ABSTRACT:
Conductive sidewall spacer structures are formed using a method that patterns structures (mandrels) and activates the sidewalls of the structures. Metal ions are attached to the sidewalls of the structures and these metal ions are reduced to form seed material. The structures are then trimmed and the seed material is plated to form wiring on the sidewalls of the structures.

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