Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2008-01-08
2008-01-08
Toledo, Fernando L. (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S646000, C438S632000
Reexamination Certificate
active
07316974
ABSTRACT:
A wiring pattern formation method in which a wiring pattern is formed by arranging, in a region which is demarcated by a partition wall, liquid material which includes an electrically conductive material, including: arranging a resin material around the periphery of a region upon which the wiring pattern is to be formed; imparting liquid affinity to a demarcated region which has been demarcated by the resin material; narrowing down the demarcated region by flowing out the resin material towards and into the demarcated region; and forming the partition wall by curing the resin material.
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Communication from Japanese Patent Office re: related application.
Sakurada Kazuaki
Shintate Tsuyoshi
Uehara Noboru
Harness & Dickey & Pierce P.L.C.
Lee Jae
Seiko Epson Corporation
Toledo Fernando L.
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