Wiring pattern formation method, manufacturing method for...

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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C438S646000, C438S632000

Reexamination Certificate

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07316974

ABSTRACT:
A wiring pattern formation method in which a wiring pattern is formed by arranging, in a region which is demarcated by a partition wall, liquid material which includes an electrically conductive material, including: arranging a resin material around the periphery of a region upon which the wiring pattern is to be formed; imparting liquid affinity to a demarcated region which has been demarcated by the resin material; narrowing down the demarcated region by flowing out the resin material towards and into the demarcated region; and forming the partition wall by curing the resin material.

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Communication from Japanese Patent Office re: related application.

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