Wiring material and a semiconductor device having a wiring...

Details Wiring material and a semiconductor device having a wiring... Wiring material and a semiconductor device having a wiring...

2008-08-06

2010-02-16

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257SE23155

Reexamination Certificate

active

07663238

ABSTRACT:
An object of the present invention is to realize a semiconductor device having a high TFT characteristic. In manufacturing an active matrix display device, electric resistivity of the electrode material is kept low by preventing penetration of oxygen ion into the electrode in doping of an impurity ion. A display device having a low electric resistivity can be obtained.

REFERENCES:
patent: 4597824 (1986-07-01), Shinada et al.
patent: 5132756 (1992-07-01), Matsuda
patent: 5422209 (1995-06-01), Ono et al.
patent: 5504020 (1996-04-01), Aomori et al.
patent: 5594569 (1997-01-01), Konuma et al.
patent: 5643826 (1997-07-01), Ohtani et al.
patent: 5738948 (1998-04-01), Ikeda et al.
patent: 5913100 (1999-06-01), Kohsaka et al.
patent: 5923962 (1999-07-01), Ohtani et al.
patent: 6088070 (2000-07-01), Ohtani et al.
patent: 6281057 (2001-08-01), Aya et al.
patent: 6303483 (2001-10-01), Kunikiyo
patent: 6313481 (2001-11-01), Ohtani et al.
patent: 6452341 (2002-09-01), Yamauchi et al.
patent: 6503819 (2003-01-01), Tanabe et al.
patent: 6531713 (2003-03-01), Yamazaki
patent: 6614083 (2003-09-01), Yamazaki et al.
patent: 6723631 (2004-04-01), Noguchi et al.
patent: 0 735 152 (1996-10-01), None
patent: 0 947 593 (1999-10-01), None
patent: 5-93267 (1993-04-01), None
patent: 5-263226 (1993-10-01), None
patent: 7-76771 (1995-03-01), None
patent: 7-130652 (1995-05-01), None
patent: 8-153722 (1996-06-01), None
patent: 10-247735 (1998-09-01), None
patent: 11-133463 (1999-05-01), None
patent: 2001-56485 (2001-02-01), None
patent: WO 95/16797 (1995-06-01), None
Yoshida, T. et al, “A Full Color Thresholdless Antiferroelectric LCD Exhibiting Wide Viewing Angle with Fast Response Time,” SID 97 Digest, 1997, pp. 841-844.
Furue, H. et al, “Characteristics and Driving Scheme of Polymer-Stabilized Monostable FLCD Exhibiting Fast Response Time and High Contrast Ration with Gray-Scale Capability,” SID 98 Digest, 1998, pp. 782-785.
Einspruch, N.G., ed.,VLSI Handbook, Ch. 28: “Silicon-On-Insulator for VLSI Applications,” Academic Press, Inc., 1985, pp. 503-505.
Wolf, S. et al,Silicon Processing for the VLSI Era, vol. 1:Process Technology, Lattice Press, 2ndedition, 2000, pp. 256-257.

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