Wiring layer structure for ferroelectric capacitor

Details Wiring layer structure for ferroelectric capacitor Wiring layer structure for ferroelectric capacitor

2007-06-12

2007-06-12

Lindsay, Jr., Walter (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S759000, C438S760000, C438S768000, C438S003000, C438S758000, C257SE21208

Reexamination Certificate

active

11065582

ABSTRACT:
Wiring layers through that come into direct contact with an electrode of a ferroelectric capacitor provide a wiring layer structure configured so that the characteristic of the ferroelectric substance is not degraded by production of a reducing agent. One of coating layers through is provided on the periphery of the Al main wiring layer. A single Ti film or TiN film or a combination of both is used as the coating film. The TiN film suppresses reaction between water and aluminum. The Ti film occludes hydrogen. Therefore, the coating layer provided on the periphery of the Al wiring layer inhibits water or molecular hydrogen from entering the Al wiring layer from the outside and therefore there is no degradation of the characteristics of the ferroelectric capacitor.

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