Wiring-forming method

Details Wiring-forming method Wiring-forming method

1996-05-02

1998-07-07

Picardat, Kevin

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438626, H01L 2144

Patent

active

057768277

ABSTRACT:
An insulating layer 6 is formed covering a lower level wiring layer 5. Contact hole 11 registered with the lower level wiring 5 is then formed in the insulating layer 6. An adhesion layer 12 is sputtered on the lower level wiring layer 5 and a whole surface of the third level insulating layer 6. Then, a blanket tungsten layer 13 is deposited on the adhesion layer 12. The whole surface of the blanket tungsten layer 13 is etched back until a small hollow gap is formed at the upper end portion of the contact hole 11, to leave the blanket tungsten layer 13 only in the inside of the contact hole 11. Thereafter, an Al alloy layer is reflow-sputtered on the whole surface of the insulating layer 6 and the inside of the contact holes at a comparatively low temperature to form an upper level wiring layer 15. The surface unevenness produced in etch-back process can be planarized. A wiring having a good coverage, a good quality of layer, and a flat surface can be formed.

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Novuyoshi Kobayashi, "Technique for Forming Fine Wiring, Using Tungsten CVD", 38th semiconductor specialized meetings preliminary text (Jul. 25-28, 1992).
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