Wiring and manufacturing method thereof, semiconductor...

Details Wiring and manufacturing method thereof, semiconductor... Wiring and manufacturing method thereof, semiconductor...

2004-07-29

2010-02-23

Garber, Charles D (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C257SE21413

Reexamination Certificate

active

07666718

ABSTRACT:
A dry etching method for forming tungsten wiring having a tapered shape and having a large specific selectivity with respect to a base film is provided. If the bias power density is suitably regulated, and if desired portions of a tungsten thin film are removed using an etching gas having fluorine as its main constituent, then the tungsten wiring having a desired taper angle can be formed.

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