Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2006-07-15
2010-12-14
Loke, Steven (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257SE23161
Reexamination Certificate
active
07851920
ABSTRACT:
Provided are a wire structure, a method for fabricating a wire, a thin film transistor (TFT) substrate, and a method for fabricating a TFT substrate. The wire structure includes a barrier layer formed on a substrate and including copper nitride and a copper conductive layer formed on the barrier layer and including copper or a copper alloy.
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Bae Yang-ho
Cho Beom-seok
Jeong Chang-oh
Lee Je-hun
Innovation Counsel LLP
Loke Steven
Samsung Electronics Co,. Ltd.
Thomas Kimberly M
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