Wire structure and semiconductor device comprising the wire...

Details Wire structure and semiconductor device comprising the wire... Wire structure and semiconductor device comprising the wire...

2011-04-26

2011-04-26

Tran, Minh-Loan T (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Gate arrays

C257S211000, C257S390000, C257SE23144, C257SE29330, C257SE29170, C977S762000, C977S765000, C977S940000, C977S732000, C174S126100

Reexamination Certificate

active

07932543

ABSTRACT:
Provided are a wire structure and a semiconductor device having the wire structure. The wire structure includes a first wire that has a first region having a width of several to tens of nanometers and a second region having a width wider than that of the first region.

REFERENCES:
patent: 5882998 (1999-03-01), Sur et al.
patent: 6362027 (2002-03-01), Yamazaki et al.
patent: 2002/0017671 (2002-02-01), Goebel et al.
patent: 2002/0153160 (2002-10-01), Hofmann et al.
patent: 2005/0145928 (2005-07-01), Ogura et al.
patent: 2007/0105321 (2007-05-01), Lee et al.
patent: 2007/0210449 (2007-09-01), Caspary et al.

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