Wire structure and forming method of the same

Details Wire structure and forming method of the same Wire structure and forming method of the same

2006-05-05

2010-02-23

Richards, N Drew (Department: 2895)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S620000, C438S622000, C438S624000, C438S627000, C438S629000, C438S637000, C438S639000, C257S758000, C257S760000

Reexamination Certificate

active

07666782

ABSTRACT:
A wire structure, having: a first insulating layer having a lower layer trench formed in an outer surface thereof; a first diffusion preventing film formed on an inner surface of the lower layer trench; a lower layer wire filled in the lower layer trench over the first diffusion preventing film; an interlayer diffusion preventing film formed on the lower layer wire, the interlayer diffusion preventing film made of a high melt point metal or a high melt point metal compound; a second insulating layer formed over the first insulating layer and the interlayer diffusion preventing film, a second insulating layer having a via hole that penetrates through the second insulating layer and the interlayer diffusion preventing film so as to reach the lower layer wire; a conductive second diffusion preventing film formed on an inner surface of the via hall; a conductor filled in the via hole over the second diffusion preventing film, and an adhering film made of the material that forms the interlayer diffusion preventing film, wherein the adhering film is formed so as to extend from an upper surface of the lower layer wire to a side surface of the second insulating layer within the via hall.

REFERENCES:
patent: 6861329 (2005-03-01), Choi
patent: 2006/0043420 (2006-03-01), Kakoschke et al.
patent: 2006/0183326 (2006-08-01), Yoo et al.
patent: 2006/0249850 (2006-11-01), Erturk et al.
patent: 2001-160590 (2001-06-01), None
patent: 2004-153162 (2004-05-01), None
Luther et al., “Planar Copper-Polyimide Back End of the line, Interconnections For ULSI Devices,” VMIC Conference, 1993, Jun. 8-9, pp. 15-21.

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