Wire-bonding method for chips with copper interconnects by...

Details Wire-bonding method for chips with copper interconnects by... Wire-bonding method for chips with copper interconnects by...

2005-11-08

2005-11-08

Thai, Luan (Department: 2891)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S612000

Reexamination Certificate

active

06962864

ABSTRACT:
A wire-bonding method for chips with copper interconnects by introducing a thin layer is provided for solving the problem of oxidizing a copper bonding-pad during bonding processing in order not to deteriorate the bonding strength and yield rate thereof. The wire-bonding method of the present invention comprises: a step for providing a chip with a copper bonding-pad; another step for providing an aqueous solution to form a Cuprous oxide thin layer on the copper bonding-pad; and yet another step for setting a plurality of copper interconnects on the copper bonding-pad and providing an ultrasonic power for removing the Cuprous oxide layer to have the interconnects bonded on the copper bonding-pad.

REFERENCES:
patent: 5756380 (1998-05-01), Berg et al.
patent: 5955782 (1999-09-01), Kosteva et al.
patent: 6770971 (2004-08-01), Kouno et al.

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