Semiconductor device manufacturing: process – Chemical etching – Combined with coating step
Reexamination Certificate
2008-07-31
2011-11-15
Richards, N Drew (Department: 2895)
Semiconductor device manufacturing: process
Chemical etching
Combined with coating step
C438S702000, C438S703000, C438S761000, C438S763000, C438S787000, C257S396000, C257S397000, C257S432000, C257S434000, C257S435000
Reexamination Certificate
active
08058177
ABSTRACT:
Winged via structures to increase overlay margin are generally described. In one example, a method comprises depositing a sacrificial layer to an interlayer dielectric, the interlayer dielectric being coupled with a semiconductor substrate, forming at least one trench structure in the sacrificial layer wherein the trench structure comprises a first direction along a length of the trench structure and a second direction along a width of the trench structure wherein the second direction is substantially perpendicular to the first direction, depositing a light sensitive material to the trench structure and the sacrificial layer, and patterning at least one winged via structure in the light sensitive material to overlay the trench structure wherein the winged via structure extends in the second direction beyond the width of the trench structure onto the sacrificial layer.
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Bigwood Bob
Brain Ruth
Daviess Shannon
Weiss Martin
Cool Patent P.C.
Curtin Joseph P.
Garcia Joannie A
Intel Corporation
Richards N Drew
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