Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1994-12-19
1996-12-17
Limanek, Robert P.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257341, 257401, 257365, 257343, H01L 2978, H01L 2972, H01L 21265
Patent
active
055856578
ABSTRACT:
A source cell having reduced area and reduced polysilicon window width requirements for use as the source region in a DMOS transistor is disclosed, comprising: a source region of semiconductor material disposed on a semiconductor substrate; a plurality of backgate contact segments of predetermined size and separated by predetermined distances; and a plurality of source contact windows alternating with the backgate contact segments so that a narrow source contact region is formed of alternating source contact and backgate contact material. A DMOS transistor embodying the source region including the backgate contact segments and windowed source contacting regions of the invention is disclosed. An integrated circuit providing an array of DMOS transistors having the improved source regions of the invention is disclosed.
Other devices, systems and methods are also disclosed.
REFERENCES:
patent: 3926694 (1975-12-01), Cauge et al.
patent: 4644637 (1987-02-01), Temple
patent: 4928155 (1990-05-01), Nakagawa et al.
patent: 5079602 (1992-01-01), Masana Harada
patent: 5105243 (1992-04-01), Nakagawa et al.
Efland Taylor R.
Jones, III Roy C.
Kwon Oh-Kyong
Malhi Satwinder
Ng Wai T.
Brady III W. James
Courtney Mark E.
Donaldson Richard L.
Limanek Robert P.
Texas Instruments Incorporated
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