Wideband Gaussian white noise source

Details Wideband Gaussian white noise source Wideband Gaussian white noise source

2006-10-31

2006-10-31

Chang, Joseph (Department: 2817)

Oscillators

Electrical noise or random wave generator

C708S251000, C708S253000

Reexamination Certificate

active

07129797

ABSTRACT:
A white noise generator comprising a MOSFET operated in its linear region and having zero source-drain DC bias current. This is achieved by connecting the source or drain terminal of the MOSFET to a gate terminal of a MOSFET amplifier that may be implemented as a multi-stage differential amplifier. Such a noise source avoids the effect of DC current responsible for generating 1/f noise and has a small physical size that results in low parasitic capacitance of the device itself.

REFERENCES:
patent: 6630669 (2003-10-01), Chin et al.
Title: Review Of Noise In Semiconductor Devices And Modeling Of Noise In Surrounding Gate Mosfet Author: Bipin Rajendran (under guidance of Prof. Fabian Pease Date: Dec. 2001.
Title: Prospects For Charge Sensitive Amplifiers In Scaled CMOS Author: Paul O'Connor*, Gianluigi De Geronimo Date: Mar. 27, 2001.

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