Wide frequency band transition between via RF transmission lines

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

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Details

438613, 438618, H01L 2144

Patent

active

059306653

ABSTRACT:
A multi-layer circuit structure including a plurality of substrate layers. At least one planar transmission line, including microstrip, stripline, or coplanar line, disposed on the plurality of substrate layers. A via transmission line connected to that at least one planar transmission line and extending through the plurality of substrate layers. The via transmission lines having the same topology as the at least one planar transmission line for providing wide frequency band transition between the via transmission lines and the at least one planar transmission line.

REFERENCES:
patent: 4894114 (1990-01-01), Nathanson et al.
patent: 5646067 (1997-07-01), Gaul
patent: 5767009 (1998-06-01), Yoshida et al.

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