Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2009-08-06
2010-12-28
Dickey, Thomas L (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE29193
Reexamination Certificate
active
07859057
ABSTRACT:
A method and device for protecting wide bandgap devices from failing during suppression of voltage transients. An improvement in avalanche capability is achieved by placing one or more diodes, or a PNP transistor, across the blocking junction of the wide bandgap device.
REFERENCES:
patent: 4904609 (1990-02-01), Temple
patent: 4927772 (1990-05-01), Arthur et al.
patent: 5170231 (1992-12-01), Fujii et al.
patent: 5270223 (1993-12-01), Liu
patent: 5544038 (1996-08-01), Fisher et al.
patent: 5814884 (1998-09-01), Davis et al.
patent: 5962876 (1999-10-01), Yu
patent: 6113632 (2000-09-01), Reif
patent: 6144093 (2000-11-01), Davis et al.
patent: 6297552 (2001-10-01), Davis et al.
patent: 6316793 (2001-11-01), Sheppard et al.
patent: 6353236 (2002-03-01), Yatsuo et al.
patent: 6404050 (2002-06-01), Davis et al.
Oh Kwanghoon
Rexer Christopher L.
Shenoy Praveen Muralheedaran
Woodin Richard L.
Yedinak Joseph A.
Dickey Thomas L
Fairchild Semiconductor Corporation
FitzGerald Esq. Thomas R.
Hiscock & Barclay LLP
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