Wide area source of multiply ionized atomic or molecular species

Details Wide area source of multiply ionized atomic or molecular species Wide area source of multiply ionized atomic or molecular species

1986-07-22

1988-04-12

Moore, David K.

Electric lamp and discharge devices: systems

Discharge device load with fluent material supply to the...

Plasma generating

31511131, 31511181, 31511191, 3133621, 3133611, H05H 102, H05H 103

Patent

active

047376880

ABSTRACT:
Apparatus for generating multiply charged ions from a source of wide area for use in ion implantation is based upon electron beam plasma interactions which more efficiently create a large density of multiply ionized species than conventional plasma sources over a wide area (1-20 cm in diameter). The beam electrons are generated from a glow discharge electron gun operating in the abnormal glow discharge state. More multiply ionized species are created because of the larger number of electrons at high energy present in a beam created discharge as compared to conventional hollow cathode or thermionic cathode ion sources. By using a ring-shaped cold cathode beam electron generator it is possible to realize a wide area source 2-20 cm in diameter. This multiple ion source permits the realization of a fixed ion implantation energy using a lower electrostatic potential because multiply ionized species are accelerated rather than singly ionized species.

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patent: 4339691 (1982-07-01), Morimiya et al.
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patent: 4645978 (1987-02-01), Harvey et al.
patent: 4652795 (1987-03-01), Lee et al.

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