Wide and narrow trench formation in high aspect ratio MEMS

Details Wide and narrow trench formation in high aspect ratio MEMS Wide and narrow trench formation in high aspect ratio MEMS

2008-07-29

2008-07-29

Toledo, Fernando L. (Department: 2823)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Physical stress responsive

C438S051000, C438S052000, C438S053000, C257S414000, C257S415000, C257S417000

Reexamination Certificate

active

07405099

ABSTRACT:
Methods have been provided for forming both wide and narrow trenches on a high-aspect ratio microelectromechanical (MEM) device on a substrate including a substrate layer (126), an active layer (128), and a first sacrificial layer (130) disposed at least partially therebetween. The method includes the steps of forming a first trench (154), a second trench (156), and a third trench (152) in the active layer (128), each trench (154, 156, 152) having an opening and sidewalls defining substantially equal first trench widths, depositing oxide and sacrificial layers thereover and removing the oxide and sacrificial layers to expose the third trench (152) and form a fourth trench (190) in the active layer (128) from the first and the second trench (154, 156), the fourth trench (190) having sidewalls defining a second trench width that is greater than the first trench width.

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