Wet treatment adapted for mirror etching ZnSe

Details Wet treatment adapted for mirror etching ZnSe Wet treatment adapted for mirror etching ZnSe

1994-04-11

1995-08-29

Powell, William

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156345, 252 792, B44C 122, H01L 21306

Patent

active

054457068

ABSTRACT:
Group II-VI compound semiconductor crystal containing Zn as group II element or mixed crystal containing the compound semiconductor crystal is etched by an etchant made of H.sub.2 SO.sub.4 aqueous solution dissolved with potassium permanganate KMNO.sub.4. Preferably, an etchant is moved round in a cylindrical vessel by a stirrer, and group II-VI compound semiconductor wafers are held by a jig, disposed generally in parallel with the flow of the etchant, immersed into the etchant, and mirror-etched.

REFERENCES:
patent: 4501636 (1985-02-01), Valley
patent: 4840701 (1989-06-01), Stern
patent: 5038068 (1991-08-01), Kushida et al.
patent: 5354490 (1994-10-01), Yu et al.

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