Wet etching station and a wet etching method adapted for utilizi

Semiconductor device manufacturing: process – Chemical etching – Liquid phase etching

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Details

438747, 438753, 156345, H01L21/302

Patent

active

059045728

ABSTRACT:
A wet etching station and a wet etching method adapted for utilizing the same are provided. The wet etching station includes a bath apparatus containing a chemical etchant, with the bath apparatus having a plurality of cooling lines installed in the lower portion of the bath area, such that the cooling lines can make contact with the chemical etchant. Thus, a large-diameter wafer can uniformly etched.

REFERENCES:
patent: 2802726 (1957-08-01), Langsfeld
patent: 4053347 (1977-10-01), Glenn
patent: 5558736 (1996-09-01), Lee et al.
patent: 5788800 (1998-08-01), Lee et al.

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