Wet etching process

Details Wet etching process Wet etching process

2007-08-14

2007-08-14

Alanko, Anita (Department: 1765)

Etching a substrate: processes

Etching of semiconductor material to produce an article...

C216S041000, C216S051000, C216S056000, C216S087000, C216S099000

Reexamination Certificate

active

10710984

ABSTRACT:
The present invention illustrates a bulk silicon etching technique that yields straight sidewalls, through wafer structures in very short times using standard silicon wet etching techniques. The method of the present invention employs selective porous silicon formation and dissolution to create high aspect ratio structures with straight sidewalls for through wafer MEMS processing.

REFERENCES:
patent: 5830777 (1998-11-01), Ishida et al.
patent: 6020250 (2000-02-01), Kenney
patent: 6139758 (2000-10-01), Tu
patent: 6358861 (2002-03-01), Ohji et al.

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