Etching a substrate: processes – Nongaseous phase etching of substrate
Patent
1997-08-21
1999-06-22
Breneman, Bruce
Etching a substrate: processes
Nongaseous phase etching of substrate
216 90, 438740, 438745, 156345, B44C 122
Patent
active
059140526
ABSTRACT:
Wet etch methods of anisotropically etching a substantially vertical etched step in a film. Methods of forming a substantially vertical etched step include depositing an etching solution droplet upon the surface of the film to be etched and monitoring at least one characteristic parameter of the etching solution droplet. Control of the etching solution droplet is carried out corresponding to monitored parameters of the etching solution droplet. Control is carried out through infusion and effusion of the etching solution droplet in order to replenish the chemical reactants in the etching solution droplet. Replenishing the etching solution droplet, while keeping the droplet of a uniform size, maintains a uniform etching chemistry as the etching solution droplet would otherwise constantly change in its chemistry as it etches material from the surface being etched. Control measures include infusion and effusion of the etching solution droplet, droplet size maintenance, and end-point detection for when the etching solution droplet has fully penetrated the film or surface to be etched. Control measures also include control of the chemical potential, including surface tension chemical reactant and reaction product boundary layers within the etching solution droplet, and turbulent or laminar flow control within the etching solution droplet.
REFERENCES:
patent: 5119116 (1992-06-01), Yu
patent: 5292445 (1994-03-01), Fjare et al.
patent: 5464480 (1995-11-01), Matthews
Derderian Garo J.
Sandhu Gurtej S.
Ahmed Shamim
Breneman Bruce
Micro)n Technology, Inc.
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