Wet cleaning method to eliminate copper corrosion

Details Wet cleaning method to eliminate copper corrosion Wet cleaning method to eliminate copper corrosion

2006-04-04

2006-04-04

Goudreau, George A. (Department: 1763)

Semiconductor device manufacturing: process

Chemical etching

Having liquid and vapor etching steps

C134S001200, C134S001300, C438S725000, C438S748000, C438S750000

Reexamination Certificate

active

07022610

ABSTRACT:
A method for cleaning semiconductor substrates includes a DI water clean operation that uses a spin speed no greater than 350 rpm. The cleaning method may include additional cleaning operations such as an organic clean, an aqueous chemical clean or a DI water/ozone clean. The cleaning method may be used to clean substrates after the conclusion of an etching procedure which exposes a single film between a Cu-containing conductive material and the environment. The spin speed of the DI water clean operation prevents copper corrosion due to breakdown of the film that separates the Cu-containing conductive material from the environment.

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