Wet chemical etching of III/V semiconductor material without gas

Details Wet chemical etching of III/V semiconductor material without gas Wet chemical etching of III/V semiconductor material without gas

1981-08-14

1982-10-12

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156644, 156662, 252 793, H01L 21312

Patent

active

043537790

ABSTRACT:
An etching solution for III/V semiconductor material, such as gallium arsenide, consists essentially of: 20 to 90 vol. % of phosphoric acid solution; 15 to 80 vol. % of hydrogen peroxide solution; 0 to 60 vol. % of water; and an amount of fluorine ion effective to provide at least 0.01 mole of fluorine ion per liter of solution, said solution being effective to etch without evolving a gaseous product.

REFERENCES:
patent: 3158517 (1964-11-01), Schwarzenberger
patent: 4100014 (1978-07-01), Kuhn-Kuhnenfeld et al.
J. Electrochem. Soc., vol. 125, No. 9, 1978, pp. 1510-1514, A New Etching Solution System, H.sub.3 PO.sub.4 --H.sub.2 O.sub.2 --H.sub.2 O, for GaAs and its Kinetics by Y. Mori et al.

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