Wet-chemical developable, etch-stable photoresist for UV radiati

Details Wet-chemical developable, etch-stable photoresist for UV radiati Wet-chemical developable, etch-stable photoresist for UV radiati

1996-03-14

1998-07-07

Hamilton, Cynthia

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Radiation sensitive composition or product or process of making

4302861, 4302871, 4302851, G03F 7033

Patent

active

057766576

ABSTRACT:
Photoresist compositions are described, which are sufficiently transparent in the solvent-free state for radiation of a wavelength of approximately 193 nm, and which contain nonaromatic chemical groups, which can be converted into groups with aromatic structural elements (latent aromatic groups) under process conditions, for which an image structure comprised of the resist material is not disrupted. A preferred component with latent which are produced with these compositions, show a stability in plasma etching, which is comparable with the stability of conventional resists based on phenolic resins.

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patent: 4849320 (1989-07-01), Irving et al.
patent: 5248734 (1993-09-01), Ober et al.
patent: 5369200 (1994-11-01), Schaedeli et al.
Kim et al, Chemical Abstract 119:118924 of J. Macromol. Sci., Pure Appl. Chem. (1993), A30(12), 877-97.

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