Well structure in high voltage device

Details Well structure in high voltage device Well structure in high voltage device

2006-03-07

2006-03-07

Cao, Phat X. (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S509000

Reexamination Certificate

active

07009260

ABSTRACT:
A well structure in a high voltage device comprises a first well formed in a substrate, the first well having an opposite conductive type from the substrate; a second well isolated from the first well, the second well having the same conductive type as the substrate; a field stop implant region formed between the first well and the second well and spaced apart from each of the first well and the second well by a given distance, the field stop implant region having the same conductive type as the substrate; and a pick-up region overlapped on the field stop implant region, the pick-up region having the same conductive type as the field stop implant region.

REFERENCES:
patent: 4804637 (1989-02-01), Smayling et al.
patent: 5627398 (1997-05-01), Zlebir et al.
patent: 5856215 (1999-01-01), Jung

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