Well photoresist pattern of semiconductor device and method...

Details Well photoresist pattern of semiconductor device and method... Well photoresist pattern of semiconductor device and method...

2006-07-25

2009-02-10

Ghyka, Alexander G (Department: 2812)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ion implantation of dopant into semiconductor region

C257SE21135

Reexamination Certificate

active

07488672

ABSTRACT:
Disclosed is a well photoresist pattern of a semiconductor, and the fabrication method thereof. The method includes the steps of: (a) forming a sacrificial oxide layer on a semiconductor substrate; (b) applying a primer on the sacrificial oxide layer; (c) applying a photoresist on the primer; (d) soft-baking the photoresist; (e) exposing the photoresist to light by defocusing the DOF (depth of focus) of the light transmitted to the substrate; (f) post exposure baking the photoresist; (g) developing the photo-exposed photoresist to form a well photoresist pattern; and (h) hard-baking the well photoresist pattern. It is preferable that the exposure is performed by plus(+) defocusing of light.

REFERENCES:
patent: 4606998 (1986-08-01), Clodgo et al.
patent: 6444410 (2002-09-01), Huang et al.
patent: 6458656 (2002-10-01), Park et al.
patent: 6569606 (2003-05-01), Wu et al.
patent: 6627588 (2003-09-01), Hess et al.
patent: 6777145 (2004-08-01), Zhou et al.
patent: 6833326 (2004-12-01), Koh et al.
patent: 2003/0186547 (2003-10-01), Koh et al.
patent: 2005/0176224 (2005-08-01), Dae Kyeun et al.

Affiliated with

Also associated with

Rating

Well photoresist pattern of semiconductor device and method... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Well photoresist pattern of semiconductor device and method..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Well photoresist pattern of semiconductor device and method... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4103168