Way to fabricate the self-aligned T-shape gate to reduce gate re

Details Way to fabricate the self-aligned T-shape gate to reduce gate re Way to fabricate the self-aligned T-shape gate to reduce gate re

1998-10-01

2000-12-12

Elms, Richard

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having schottky gate

438182, H01L 21338

Patent

active

061597813

ABSTRACT:
Disclosed is a method of fabricating a semiconductor field effect transistor, wherein the gate has a short foot portion in contact with the semiconductor substrate for a short gate length and consequent low capacitance, and a large amount of metal in a contact portion for low gate resistance. Salicides are formed on the T-gate source on drain contact areas resulting in large, low resistance contact areas.

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