Water-soluble negative photoresist polymer, composition...

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Radiation sensitive composition or product or process of making

Reexamination Certificate

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C430S281100, C430S286100, C430S311000

Reexamination Certificate

active

10999412

ABSTRACT:
Photoresist patterns are formed using a photoresist composition, which includes water, a photoacid generator, and a negative photoresist polymer. The polymer includes a basic-type repeating unit represented by Formula (I) (shown below), so that a developing process can be performed not by using conventional TMAH solution but by using water. Additionally, since the main solvent of the composition is water, the disclosed photoresist composition is eco-friendly, and has a low light absorbance at 193 nm and 248 nm, which is useful in a photolithography process using light source in a far ultraviolet region when high-integrated fine circuits of semiconductor device are manufactured.wherein R1, R2, R3, R4, R5, R6, R7, b, c, d and m are defined in the specification.

REFERENCES:
patent: 4925913 (1990-05-01), Teramoto et al.
patent: 5272026 (1993-12-01), Roland et al.
patent: 6399273 (2002-06-01), Yamada et al.
patent: 6875556 (2005-04-01), Harada et al.
patent: 2000098630 (2000-04-01), None
patent: 10-1998-015678 (1998-05-01), None
CA DN 122:12205 for JP 06073146, Mar. 1994.

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