Water-soluble negative photoresist polymer and composition...

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Radiation sensitive composition or product or process of making

Reexamination Certificate

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Details

C430S311000, C430S330000, C526S072000, C526S319000, C526S320000

Reexamination Certificate

active

10999416

ABSTRACT:
Photoresist patterns are formed using a photoresist composition, which includes water, a negative photoresist polymer having a salt-type repeating unit, and a photoacid generator, so that a developing process can be performed not by using conventional TMAH solution but by using water. Additionally, because the main solvent of the composition is water, the disclosed photoresist composition is environment-friendly, and has a low light absorbance at 193 nm and 248 nm, which is useful in a photolithography process using a light source in a far ultraviolet region when high-integrated fine circuits of semiconductor device are manufactured.

REFERENCES:
patent: 5272026 (1993-12-01), Roland et al.
patent: 5548047 (1996-08-01), Ito et al.
patent: 6399273 (2002-06-01), Yamada et al.
patent: 56004152 (1981-01-01), None
patent: 2000098630 (2000-04-01), None
patent: 10-1998-015678 (1998-05-01), None

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