Warp-suppressed semiconductor device

Details Warp-suppressed semiconductor device Warp-suppressed semiconductor device

2004-01-23

2010-06-01

Williams, Alexander O (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Flip chip

C257SE23140, C257SE23193, C257SE23069, C257SE23102, C257SE23110, C257SE23090, C257SE23107, C257SE21503, C257S707000, C257S782000, C257S737000, C257S738000, C257S787000, C257S789000, C257S788000, C257S704000, C257S710000, C257S717000, C257S720000, C257S712000, C361S705000

Reexamination Certificate

active

07728440

ABSTRACT:
A semiconductor device includes: a semiconductor chip mounted on a mounting substrate; a first resin filling a gap between the chip and the substrate; a frame-shaped stiffener surrounding the chip; a first adhesive for bonding the stiffener to the substrate; a lid for covering the stiffener and an area surrounded by the stiffener; and a second resin filling a space between the stiffener and the chip. A thermal expansion coefficient of the second resin is smaller than that of the first resin. The first resin includes an underfill part filling a gap between the chip and the substrate and a fillet part extended from the chip region.

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