Walled slot devices and method of making same

Fishing – trapping – and vermin destroying

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

437904, 437909, 437913, 437 78, H01L 2906

Patent

active

047957212

ABSTRACT:
An improved integrated circuit structure is disclosed which comprises a substrate having one or more active device slots with active elements of an active device formed therein and an isolation slot surrounding the one or more active device slots with an inner wall contiguous with the outer wall of the one or more active device slots. The active elements in the one or more active device slots are thereby in direct contact with isolation material in the isolation slot to thereby inhibit end effects.

REFERENCES:
patent: 3681668 (1972-08-01), Kobayashi
patent: 3703420 (1972-11-01), Vora
patent: 3762966 (1973-10-01), Engeler et al.
patent: 4062034 (1977-12-01), Matsushita et al.
patent: 4104086 (1978-08-01), Bondur et al.
patent: 4139442 (1979-02-01), Bondur et al.
patent: 4302763 (1981-11-01), Ohuchi et al.
patent: 4333227 (1982-06-01), Horng et al.
patent: 4339767 (1982-07-01), Horng et al.
patent: 4392149 (1983-07-01), Horng et al.
patent: 4419150 (1983-12-01), Soclof
patent: 4484211 (1984-11-01), Takemoto et al.
Barbee et al., "All Ion-Implant Bipolar Transistor Process", IBM Tech. Disc. Bull., vol. 24, (1981), pp. 3409-3412.
Lillja et al., "Process for Fabrication of Shallow and Deep Silicon Dioxide Filled Trenches", IBM Technical Disclosure Bulletin, vol. 22, No. 11, Apr., 1980, pp. 4900-4902.
Wang et al., "Reactive-Ion Etching Eases Restrictions on Materials and Feature Sizes", Electronics, Nov. 3, 1983, pp. 157-161.
Minegishi et al., "A Sub-Micron CMOS Megabit Level Dynamic Ram Technology Using a Doped Face Trench Capacitor Cell", Proceedings, IEDM, 1983, pp. 319-322.
Morie et al., "Depletion Trench Capacitor Technology for Megabit Level MOS dRAM", IEEE EDL, vol. EDL-4, No. 11, Nov., 1983, pp. 411-413.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Walled slot devices and method of making same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Walled slot devices and method of making same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Walled slot devices and method of making same will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2168412

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.