Wall deposition thickness sensor for plasma processing chamber

Details Wall deposition thickness sensor for plasma processing chamber Wall deposition thickness sensor for plasma processing chamber

1998-10-29

2000-02-15

Kim, Robert H.

Optics: measuring and testing

By dispersed light spectroscopy

Utilizing a spectrometer

356359, 356382, G01B 902

Patent

active

060259167

ABSTRACT:
A device for measuring polymer build-up on plasma chamber walls provides a cooled window on which a film may form. Light passing through the window outside the chamber may be measured by interferometric techniques to determine change in film thickness and thus indicate when cleaning is required and the success of cleaning operations. A sapphire window may be used to allow for air cooling and to reduce etching by the plasma. A fiber optic cable may communicate the light between the window and measurement electronics.

REFERENCES:
patent: 4618262 (1986-10-01), Maydan et al.
patent: 5465154 (1995-11-01), Levy

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