Wafer with elevated contact substructures

Details Wafer with elevated contact substructures Wafer with elevated contact substructures

1997-03-26

1999-05-25

Picardat, Kevin M.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438612, 438615, 438118, H01L 2144

Patent

active

059077859

ABSTRACT:
Disclosed is a semiconductor wafer, and the method of making the same, the wafer being formed to have a multiplicity of raised contact pads on its surface. The contact pads are formed with conductors which are disposed on the surface of the wafer and which are coupled to internal circuitry embedded in the wafer rough vias in the wafers surface. The contact pads are in a raised elevational relationship relative to the surface conductors. After the wafer is fully processed, by dicing individual integrated circuit chips out of the wafer, each chip can then be mounted on a higher level of assembly, such as a printed circuit board. The raised contact pads originally formed on the wafer, and therefore formed on each individual chip, provide the contact points by which the chip can be bonded with matingly arranged contact pads on the higher level of assembly.

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