Wafer support system

Details Wafer support system Wafer support system

1982-02-16

1983-07-12

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156345, 204298, 269 21, H01L 21306, B44C 122, C03C 1500, C03C 2506

Patent

active

043929150

ABSTRACT:
A system for supporting wafers (18) on a gas cushion within the vacuum chamber (12) of a plasma etcher (10). An etchant gas is introduced into the vacuum chamber, and a second gas at a volume flow rate much lower than the volume flow rate of the etchant gas is directed to orifices formed in a wafer-receiving surface of an electrode (16) to define the gas cushion. In accordance with one aspect of the invention, the second gas is an inert gas, and in accordance with another aspect of the invention, the second gas is a reactant gas which is also directed into the vacuum chamber to serve as a reactant gas in conjunction with the first reactant gas.

REFERENCES:
patent: 3645581 (1972-02-01), Lasch et al.
patent: 4160690 (1979-07-01), Shibagaki et al.
patent: 4341592 (1982-07-01), Shortes et al.
Microelectronic Manufacturing and Testing, 1981 (Jan.), Automated Wafer Handling and Processing, Corey Mullins, pp. 40-41.

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