Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Die bond
Reexamination Certificate
2006-08-08
2006-08-08
Tran, Mai-Huong (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Die bond
C438S116000, C438S108000, C438S119000
Reexamination Certificate
active
07088005
ABSTRACT:
The present invention includes a method that provides a first wafer; forms a first raised contact from a first plug on the first wafer; provides a second wafer; forms a second raised contact from a second plug on the second wafer; applies an anisotropic conductive adhesive over the first wafer; aligns the second wafer to the first wafer; attaches the second wafer to the anisotropic conductive adhesive to form a continuous and conductive path between the first raised contact and the second raised contact.The present invention also includes a structure that has an anisotropic conductive film, the anisotropic conductive film has a front surface and a rear surface; a first raised contact is located over the front surface, the first raised contact forming part of a first wafer; and a second raised contact located over the rear surface, the second raised contact forming part of a second wafer, where the second raised contact faces the first raised contact.
REFERENCES:
patent: 6767763 (2004-07-01), Uchiyama
patent: 6777071 (2004-08-01), Cobbley et al.
Chen George
Intel Corporation
Tran Mai-Huong
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