Wafer scribing method and wafer scribing device

Details Wafer scribing method and wafer scribing device Wafer scribing method and wafer scribing device

2005-07-05

2005-07-05

Deo, Duy-Vu (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S708000, C438S713000, C438S715000, C438S719000

Reexamination Certificate

active

06914006

ABSTRACT:
The present invention relates to a scribing method for wafers (11), wherein a defined beam (12) is directed onto the wafer (11) by means of a beam generator means (10) so as to remove some wafer material from a wafer region. The invention also relates to a wafer-scribing device including a wafer mount (31) and a beam generator means (10) by means of which at least one defined beam can be directed onto the wafer (11).The inventive method is distinguished by the by the further step of generating a first radiation pulse having a predeterminable energy density and used to create a comparatively deep pit (18) in the wafer (11).The inventive wafer scribing means is distinguished by the provision that a radiation pulse can be generated by means of which a comparatively deep pit (18) can be created in the wafer (11).

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International Search Report (PCT/US02/31903).

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