Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – For plural devices
Patent
1990-12-13
1993-03-02
Jackson, Jr., Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
For plural devices
257730, 257731, H01L 2302, H01L 2312
Patent
active
051912244
ABSTRACT:
To achieve higher packaging density and one wafer level for a full-sized wafer memory, or wafer-scale integration memory system, the wafers are vertically stacked with each other at a predetermined interval. A packaging technique is improved in such a way that a memory system layout can be precisely realized and a precise through hole can be formed. Moreover, other chips are fixed on the wafer so as to achieve furthermore the high packaging density.
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Enomoto Minoru
Homma Makoto
Ito Kazuya
Kawamura Masao
Kuroda Shigeo
Hitachi , Ltd.
Jackson, Jr. Jerome
Monin D.
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