Wafer processing using thermal nitride etch mask

Details Wafer processing using thermal nitride etch mask Wafer processing using thermal nitride etch mask

1995-09-20

1998-01-27

Breneman, R. Bruce

Etching a substrate: processes

Masking of a substrate using material resistant to an etchant

Mask resist contains inorganic material

216 27, 216 99, 15665911, H01L 21033, B41J 216

Patent

active

057118914

ABSTRACT:
A method for forming v-shaped grooves in a substrate such as a channel plate is disclosed. A mask of silicon nitride formed by a thermal nitridation process protects the substrate during KOH etching.

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Moslehi et al. "Electrical characteristics of devices fabricated with ultrathin thermally grown silicon nitride and nitroxide" 1983 Sumposium on VLSI technology. Dig. of Technical Papers, pp. 92-93.
Habraken et al. "Characterization of low-pressure chemical vapor deposited and thermally grown silicon nitride films" J. Appl Phys. 53 (1) pp. 404-415.

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