Semiconductor device manufacturing: process – Semiconductor substrate dicing – By electromagnetic irradiation
Reexamination Certificate
2007-02-20
2007-02-20
Whitehead, Jr., Carl (Department: 2813)
Semiconductor device manufacturing: process
Semiconductor substrate dicing
By electromagnetic irradiation
Reexamination Certificate
active
10914155
ABSTRACT:
A method of processing a wafer having devices in a plurality of areas sectioned by streets arranged in a lattice pattern on the front surface to form a metal film on a back surface thereof, whereina laser beam application step for applying a laser beam capable of passing through a wafer, along the streets formed on the wafer to form a deteriorated layer is carried out before a metal film forming step for forming a metal film on the back surface of the wafer.
REFERENCES:
patent: 6936497 (2005-08-01), Ravi et al.
patent: 6939785 (2005-09-01), Kajiyama et al.
patent: 2004-79889 (2004-03-01), None
Nagai Yusuke
Nagasawa Tadato
Disco Corporation
Harrison Monica D.
Jr. Carl Whitehead
Smith , Gambrell & Russell, LLP
LandOfFree
Wafer processing method does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Wafer processing method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Wafer processing method will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3883653