Wafer processing method

Semiconductor device manufacturing: process – Semiconductor substrate dicing – By electromagnetic irradiation

Reexamination Certificate

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Reexamination Certificate

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10914155

ABSTRACT:
A method of processing a wafer having devices in a plurality of areas sectioned by streets arranged in a lattice pattern on the front surface to form a metal film on a back surface thereof, whereina laser beam application step for applying a laser beam capable of passing through a wafer, along the streets formed on the wafer to form a deteriorated layer is carried out before a metal film forming step for forming a metal film on the back surface of the wafer.

REFERENCES:
patent: 6936497 (2005-08-01), Ravi et al.
patent: 6939785 (2005-09-01), Kajiyama et al.
patent: 2004-79889 (2004-03-01), None

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