Wafer processing method

Details Wafer processing method Wafer processing method

2007-02-20

2007-02-20

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Semiconductor substrate dicing

Having specified scribe region structure

C438S033000, C438S068000, C438S113000, C257SE21599

Reexamination Certificate

active

10986371

ABSTRACT:
A laser beam processing method for processing a wafer by applying a laser beam to a predetermined area, comprising the steps of forming a resin film which absorbs a laser beam, on the surface to be processed of the wafer; applying a laser beam to the surface to be processed of the wafer through the resin film; and removing the resin film after the laser beam application step.

REFERENCES:
patent: 5597767 (1997-01-01), Mignardi et al.
patent: 6420245 (2002-07-01), Manor
patent: 2002/0001773 (2002-01-01), Saito et al.
patent: 2005/0139962 (2005-06-01), Dani et al.
patent: 2003-320466 (2003-11-01), None
patent: 2004-188475 (2004-07-01), None

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