Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2008-07-07
2010-10-19
Garber, Charles D (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S667000, C257S499000, C257S500000, C257S501000, C257S502000, C257S503000, C257S504000, C257S505000, C257S506000, C257S507000, C257S508000, C257S509000, C257S510000, C257S511000, C257S512000, C257S513000, C257S514000, C257S515000, C257S516000, C257S517000, C257S518000, C257S519000
Reexamination Certificate
active
07816264
ABSTRACT:
A wafer processing method having a step of reducing the thickness of a wafer in only a device forming area where semiconductor chips are formed by grinding and etching the back side of the wafer to thereby form a recess on the back side of the wafer. At the same time, an annular projection is formed around the recess to thereby ensure the rigidity of the wafer. Accordingly, handling in shifting the wafer from the back side recess forming step to a subsequent step of forming a back side rewiring layer can be performed safely and easily.
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Arai Kazuhisa
Kajiyama Keiichi
Abdelaziez Yasser A
Disco Corporation
Garber Charles D
Greer Burns & Crain Ltd.
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